Schottky Gate Organic Field Effect Transistor and Fabrication Method of the Same
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United States of America Patent
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Issued Date -
Oct 18, 2007
app pub date -
Jun 9, 2005
filing date -
Jun 10, 2004
priority date (Note) -
Abandoned
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Abstract
A Schottky gate field effect transistor with high speed and simple structure is provided. The Schottky gate field effect transistor includes: a source, a channel and a drain formed by one organic conductive material, in which the source, channel and drain are formed in a continuous structure within an organic conductor; a gate electrode functioning as a metal gate on one surface of the organic conductor; a Schottky barrier formed by contact between the gate electrode and the organic conductor, in which the region overlapping with the Schottky contact is the channel region.
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