Sputter Target With High-Melting Phase
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United States of America Patent
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Issued Date -
Oct 18, 2007
app pub date -
Jan 19, 2007
filing date -
Jan 23, 2006
priority date (Note) -
Abandoned
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Abstract
A sputter target is made of a material comprising at least two phases or components, wherein at least one minor phase has low solubility in the matrix and has a higher melting point than the matrix. The at least one minor phase has a mean particle size of 10 .mu.m maximum of its grains or of agglomerates formed by its grains, and the material has a density of at least 98% of its theoretical density.
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