Method for forming polycrystalline film
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United States of America Patent
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Issued Date -
Oct 11, 2007
app pub date -
Apr 2, 2007
filing date -
Apr 6, 2006
priority date (Note) -
Abandoned
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Abstract
Disclosed is a method for forming a polycrystalline film. The method for forming a polycrystalline film from a film deposited on a glass substrate while a buffer layer is interposed between the deposited film and the glass substrate, which includes the steps of: preparing a mask including a transparent region having a larger size than that of resolution limitation of a laser beam equipment and an opaque region having a size which is smaller than that of the resolution limitation of the laser beam equipment; and irradiating laser beam of the maximum intensity to a film under the transparent region while irradiating the laser beam having a minimum intensity exceeding zero to the film under an opaque region by using the mask, thereby crystallizing the film by single irradiation of the laser beam.
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