Semiconductor devices utilizing AlGaAsP
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United States of America Patent
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app pub date -
Oct 7, 2005
filing date -
Aug 24, 2005
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Abstract
A method of minimizing stress within large area semiconductor devices which utilize a GaAs substrate and one or more thick layers of Al.sub.xGa.sub.1-xAs is provided, as well as the resultant device. In general, each thick Al.sub.xGa.sub.1-xAs layer within the semiconductor structure is replaced, during the structure's fabrication, with an Al.sub.xGa.sub.1-xAs.sub.zP.sub.1-z layer of approximately the same thickness and with the same concentrations of Al and Ga. The Al.sub.xGa.sub.1-xAs.sub.zP.sub.1-z layer is lattice matched to the GaAs substrate by replacing a small percentage of the As in the layer with P.
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