Method for preparing a capacitor structure of a semiconductor memory
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United States of America Patent
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Issued Date -
Oct 4, 2007
app pub date -
May 23, 2006
filing date -
Apr 4, 2006
priority date (Note) -
Abandoned
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Abstract
A method for preparing a capacitor structure comprises forming an opening in a dielectric structure, and forming a cylindrical capacitor including a first conductive layer on the sidewall of the opening, a first dielectric layer on the surface of the first conductive layer, and a second conductive layer on the surface of the first dielectric layer. A top portion of the first conductive layer is selectively removed, and a predetermined portion of the dielectric structure is removed. A second dielectric layer covering the cylindrical capacitor and the dielectric structure is then formed to electrically separate the first conductive layer from the second conductive layer. Subsequently, a portion of the second dielectric layer is removed from the top surface of the second conductive layer, and a third conductive layer is formed on the second dielectric layer and the top surface of the second conductive layer.
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