Medium pressure plasma system for removal of surface layers without substrate loss
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United States of America Patent
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Issued Date -
Oct 4, 2007
app pub date -
Dec 6, 2005
filing date -
Dec 6, 2004
priority date (Note) -
Abandoned
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Abstract
A system and method for removing photoresist or other organic compounds from semiconductor wafers is provided. Non-fluorinated reactant gases (O.sub.2, H.sub.2, H.sub.2O, N.sub.2 etc.) are activated in a quartz tube by a medium pressure surface wave discharge. As the plasma jet impinges on a substrate, volatile reaction products (H.sub.2O, CO.sub.2, or low molecular weight hydrocarbons) selectively remove the photoresist from the surface. The medium pressure also enables high gas temperatures that provide an effective source of heat in the reactive zone on the wafer that enhances etch rates and provides a practical means of removing ion implanted photoresist.
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