Removal profile tuning by adjusting conditioning sweep profile on a conductive pad
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United States of America Patent
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Issued Date -
Oct 4, 2007
app pub date -
Mar 29, 2006
filing date -
Mar 29, 2006
priority date (Note) -
Abandoned
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Abstract
A method for controlling the removal rate of material from a substrate during a polishing process is described. In one embodiment, the pre-polish profile of the substrate is determined and polishing pad conditioning parameters are adjusted based on that profile. Parameters such as conditioning head sweep range and frequency, and conditioning element downforce and RPM may be adjusted to selectively condition portions of the pad to maintain optimum polishing qualities of the pad.
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