Method for Forming Zno Nano-Array and Zno Nanowall for Uv Laser On Silicon Substrate
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United States of America Patent
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Issued Date -
Sep 27, 2007
app pub date -
Nov 6, 2004
filing date -
Nov 6, 2003
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Abandoned
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Abstract
Provided are low-temperature formation methods of a perfectly oriented ZnO nanorod array and a new-type ZnO nanowall array having a new crystal growth rate, morphology, and orientation, from ZnO nanoparticles coated on a substrate. The method of forming the ZnO nanorod array includes synthesizing ZnO nanoparticles, coating on a substrate the ZnO nanoparticles serving both as a buffer layer and a seed layer, and growing the ZnO nanoparticles into crystals in a nutrient solution containing Zn nitrate, Zn acetate, or a derivative thereof, and hexamethylenetetramine. The method of forming the ZnO nanowall array includes synthesizing ZnO nanoparticles, coating on a substrate the ZnO nanoparticles serving both as a buffer layer and a seed layer, and growing the ZnO nanoparticles into crystals in a nutrient solution containing Zn acetate or its derivative and sodium citrate.
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