GATE DIELECTRIC STRUCTURE AND AN ORGANIC THIN FILM TRANSISTOR BASED THEREON
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United States of America Patent
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Issued Date -
Sep 20, 2007
app pub date -
Jul 24, 2006
filing date -
Mar 17, 2006
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Abandoned
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Abstract
A gate dielectric structure and an organic thin film transistor based thereon, wherein the gate dielectric structure comprises: an organic-inorganic composite layer and an organic insulation layer, and the gate dielectric structure is applied to an organic thin film transistor. As the organic-inorganic composite layer of the gate dielectric structure has an organic insulation matrix blended with inorganic surface-modified particles, it can achieve a high dielectric constant. Further, as the organic insulation layer can modify the surface of the organic-inorganic composite layer, not only the leakage current is reduced, but also the crystalline structure of the organic semiconductor layer becomes more orderly. Thus, the carrier mobility is raised, the current output of the element is increased, and the performance of the element is also greatly enhanced.
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