Silicon Substrate Etching Method
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United States of America Patent
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app pub date -
May 21, 2007
filing date -
Mar 29, 2004
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Abstract
Silicon substrate etching methods to keep surface unevenness of a structured surface formed by etching to within a fixed value. After an etching mask is formed on its surface, a silicon substrate S is mounted on a base 3 in an etching device 1. An etching gas (SF.sub.6) and a protective film forming gas (C.sub.4F.sub.8) are supplied to a chamber 2. The SF.sub.6 gas and the C.sub.4F.sub.8 gas supplied to the chamber are converted to plasma using a coil 16 to which high-frequency electrical power is applied. For example, by supplying a large amount of SF.sub.6 gas while high-frequency electrical power is applied to the base 3, dry etching primarily at the etching ground is advanced. Conversely, by supplying a large amount of C.sub.4F.sub.8 gas, protective film formation primarily to the etching structured surfaces is advanced. By repeating these steps, deep grooves with smooth structured surfaces can be formed.
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