Method for applying T-shaped photo-resist pattern to fabricate a wiring pattern with small structural dimensions
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United States of America Patent
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Issued Date -
Sep 13, 2007
app pub date -
Mar 13, 2006
filing date -
Mar 13, 2006
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Abandoned
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Abstract
A method for applying T-shaped photo-resist pattern to fabricate a wiring pattern with small structural dimensions. According to the hydroxyl of a chemical-magnified photo-resist layer must participate in a reaction to be able to fabricate the desired exposure pattern, the chemical photo-resist layer is used to form on the semiconductor substrate wafer. By providing an ammonium gas to semiconductor substrate wafers, it causes NH.sub.3-- to catch the H+ ion of the upper site of the chemical-amplified photo-resist layer. This causes a non-reactive layer over the upper portion when the patterning process for chemical-magnified photo-resist layer is performed, and then to fabricate the T-shaped photo-resist pattern. Furthermore, when the wiring pattern is deposited over the semiconductor substrate wafer, it could be able to form the wiring pattern with small structural dimensions.
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