Manganese Doped Magnetic Semiconductors
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United States of America Patent
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Issued Date -
Aug 16, 2007
app pub date -
May 17, 2005
filing date -
May 18, 2004
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Abandoned
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Abstract
A semi-conducting material being a non-oxide material or an already doped oxide material, wherein said material is doped with Manganese, Mn, and is ferromagnetic at least at one temperature in the range between room temperature and 500 K. Preferably, the Manganese doped material has a Manganese concentration at or below 5 at %.
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