Nitride based MQW light emitting diode having carrier supply layer
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United States of America Patent
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Issued Date -
Aug 16, 2007
app pub date -
Feb 15, 2006
filing date -
Feb 15, 2006
priority date (Note) -
Abandoned
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Abstract
A MQW LED structure is provided herein, which contains a carrier supply layer joined to a side of the MQW light emitting layer to provide additional carriers for recombination and to avoid/reduce the use of impurity in the light emitting layer. The carrier supply layer contains multiple and interleaving well layers and barrier layers, each having a thickness of 5.about.300 .ANG., with a total thickness of 1.about.500 nm. The well layers and the barrier layers are both made of Al.sub.pIn.sub.qGa.sub.1-p-qN (p, q.gtoreq.0, 0.ltoreq.p+q.ltoreq.1) compound semiconductor doped with Si or Ge, but with different compositions and with the barrier layers having a higher bandgap than that of the well layers. The carrier supply layer has an electron concentration of 1.times.10.sup.17.about.5.times.10.sup.21/cm.sup.3.
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