Method and system for deriving time-dependent dielectric breakdown lifetime

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United States of America Patent

APP PUB NO 20070185683A1
SERIAL NO

11352460

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Abstract

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A method and system for deriving Time Dependent Dielectric Breakdown (TDDB) lifetime of a batch of semiconductor devices, the method comprising, defining a qualifying criteria based on past measurement data; measuring at least one parameter of one or more semiconductor devices representative of the batch; comparing said at least one parameter against the qualifying criteria; and if said at least one parameter qualifies according to the qualifying criteria, deriving the TDDB lifetime for the batch based on the past measurement data and an electrical measurement of the semiconductor devices.

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Patent Owner(s)

Patent OwnerAddress
SYSTEMS ON SILICON MANUFACTURING CO PTE LTD70 PASIR RIS INDUSTRIAL DRIVE 1 SINGAPORE 519527

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Foo, Eu Gene Glen Singapore, SG 3 6
Low, Yong Han Frankie Singapore, SG 3 6

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