Systems And Methods For Forming Integrated Circuit Components Having Precise Characteristics
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United States of America Patent
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Issued Date -
Aug 2, 2007
app pub date -
Jan 25, 2007
filing date -
Jul 27, 2004
priority date (Note) -
Abandoned
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Abstract
A method of forming integrated circuit components is provided. A photomask is provided that includes a first mask feature having a mask feature geometry corresponding to a first type of integrated circuit (IC) component. A first lithography process is performed to transfer the first mask feature geometry to a semiconductor wafer to form a first IC component on the semiconductor wafer. At least one electrical characteristic of the first IC component on the semiconductor wafer is measured. The first mask feature geometry is physically modified based at least on the results of measuring the at least one electrical characteristic of the first IC component.
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