CMOS SEMICONDUCTOR DEVICES HAVING DUAL WORK FUNCTION METAL GATE STACKS
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United States of America Patent
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Issued Date -
Aug 2, 2007
app pub date -
Oct 18, 2006
filing date -
Jan 31, 2006
priority date (Note) -
Abandoned
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Abstract
CMOS semiconductor devices having dual work function metal gate structures that are formed using fabrication techniques that enable independent work function control for PMOS and NMOS device and which significantly reduce or otherwise eliminate impact on gate dielectric reliability.
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