Poly emitter bipolar device configuration and fabrication method with an inter-level dielectric deposited by plasma enhanced chemical vapor deposition
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United States of America Patent
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Issued Date -
Aug 2, 2007
app pub date -
Jan 30, 2006
filing date -
Jan 30, 2006
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Abandoned
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Abstract
The present invention discloses a high voltage and high frequency poly emitter bipolar structure with improved breakdown voltage performance. The advantage of the poly emitter bipolar structures is that the SOD coating layer can improve the breakdown voltage of a capacitor structure higher to be 6-8 volts. In addition, the poly emitter bipolar structure having the inter-level dielectric layer deposited by PECVD on the emitter and collector by optimizing PECVD deposition process condition to adjust the charge in the oxide of inter-level dielectric layer has a breakdown voltage higher than 30 volts.
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