Positive photoresist and method for producing structure
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United States of America Patent
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Issued Date -
Jul 26, 2007
app pub date -
Nov 17, 2004
filing date -
Nov 21, 2003
priority date (Note) -
Abandoned
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Abstract
Disclosed herein are a positive-type photoresist which can be developed with an aqueous alkali solution of low concentration or neutral water, can be readily stripped with ozone water, hardly produces scum, and contributes to reduction in costs and environmental loads, and a method for manufacturing a structure having a circuit formed using a resist pattern of the photoresist. A positive-type photoresist comprising a novolac resin having a benzene nucleus to which two or more hydroxyl groups are bonded and a weight-average molecular weight of 1,000 to 20,000. A method for manufacturing a structure having a circuit formed using as a resist pattern the positive-type photoresist comprising the steps of forming a resist film on the surface of a substrate by the use of the positive-type photoresist, exposing the resist film to light and carrying out development, forming a circuit using the resist pattern, and removing the resist film.
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