ETCHING METHOD AND METHOD OF FABRICATING OPENING
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United States of America Patent
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Issued Date -
Jul 26, 2007
app pub date -
Jan 26, 2006
filing date -
Jan 26, 2006
priority date (Note) -
Abandoned
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Abstract
An etching method is disclosed. First, a patterned photoresist layer is formed on a silicon material. Next, in an etching machine, using the patterned photoresist layer as a mask and using bromine hydride (HBr) as reactive gas, an etching process is performed on the silicon material. Afterwards, a ramp-down mode is used to turn off the RF power supply of the etching machine, a purge gas is injected into the etching machine for purging, and in the meantime, the gas is pumped out from the etching machine.
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