Chalcogenide precursor compound and method for preparing chalcogenide thin film using the same

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United States of America Patent

APP PUB NO 20070166645A1
SERIAL NO

11412028

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Abstract

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Disclosed herein are a soluble chalcogenide precursor compound and a method for preparing a chalcogenide thin film using the precursor compound by a solution deposition process, e.g., spin coating or dip coating. In the method, the use of the chalcogenide precursor as an inorganic semiconductor material soluble in organic solvents enables the preparation of a semiconductor thin film having excellent electrical and physical properties (e.g., crystallinity). In addition, a large-area thin film can be prepared by a solution deposition process, thus contributing to the simplification of procedures and reduction of preparation costs. Therefore, the method can be effectively applied in a wide variety of fields, such as thin film transistors, electroluminescent devices, photovoltaic cells and memory devices.

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SAMSUNG CORNING PRECISION GLASS CO LTD644-1 JINPYEONG-DONG GUMI 730-735

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  • 2006 Application Filing Year
  • G11B Class
  • 3214 Applications Filed
  • 1613 Patents Issued To-Date
  • 50.19 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances20062007200820092010201120122013201420152016201720180255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hyun, Sang Heon Suwon-Si, KR 3 8
Jeong, Hyun Dam Suwon-Si, KR 33 346
Seon, Jong Baek Seoul, KR 31 191
Shin, Hyeon Jin Suwon-Si, KR 59 492

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  • 3 Citation Count
  • G11B Class
  • 4.39 % this patent is cited more than
  • 18 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges75924343175784721149821101 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +0501001502002503003504004505005506006507007508008509009501000

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