Chalcogenide precursor compound and method for preparing chalcogenide thin film using the same
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United States of America Patent
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Issued Date -
Jul 19, 2007
app pub date -
Apr 26, 2006
filing date -
Oct 18, 2005
priority date (Note) -
Abandoned
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Abstract
Disclosed herein are a soluble chalcogenide precursor compound and a method for preparing a chalcogenide thin film using the precursor compound by a solution deposition process, e.g., spin coating or dip coating. In the method, the use of the chalcogenide precursor as an inorganic semiconductor material soluble in organic solvents enables the preparation of a semiconductor thin film having excellent electrical and physical properties (e.g., crystallinity). In addition, a large-area thin film can be prepared by a solution deposition process, thus contributing to the simplification of procedures and reduction of preparation costs. Therefore, the method can be effectively applied in a wide variety of fields, such as thin film transistors, electroluminescent devices, photovoltaic cells and memory devices.
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