SILICON MONOXIDE VAPOR DEPOSITION MATERIAL, AND PROCESS, RAW MATERIAL AND APPARATUS FOR PRODUCING THE SAME

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United States of America Patent

SERIAL NO

11470954

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A high-purity silicon monoxide vapor deposition material which, in the formation of a film by vapor deposition, is effective in inhibiting splashing, and which has an average bulk density of 2.0 g/cml and a Vickers hardness of 500 or higher; a process for producing a high-purity silicon monoxide vapor deposition material consisting of SiO and metal impurities as the remainder, the total amount of the impurities being, 50 ppm or smaller, which comprises conducting a degassing, treatment in a raw-material chamber at a temperature lower than the sublimation temperature of silicon monoxide, raising the temperature to sublimate silicon monoxide, and depositing the silicon monoxide on a substrate in a deposition chamber. and a raw material for the silicon monoxide vapor deposition material which comprises silicon metal particles and silicon dioxide particles, the average particle size of each particulate material being I to 40 .mu.m and/or the two particulate

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Patent Owner(s)

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SUMITOMO TITANIUM CORPORATION1 HIGASHIHAMACHO AMAGASAKI-SHI HYOGO 660-8533

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Arimoto, Nobuhiro Hyogo, JP 4 25
Fujita, Makoto Hyogo, JP 79 698
Kizaki, Shingo Osaka, JP 20 101
Nishioka, Kazuo Hyogo, JP 7 54
Ogasawara, Tadashi Nishinomiya-Shi, JP 46 420

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