Phase-Shift Mask Providing Balanced Light Intensity Through Different Phase-Shift Apertures And Method For Forming Such Phase-Shift Mask
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United States of America Patent
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app pub date -
Mar 23, 2007
filing date -
Sep 27, 2004
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Abstract
A photomask may include a patterned layer, a phase-shift layer adjacent the patterned layer, a first aperture, a second aperture, and a light-absorbing layer. The first aperture may allow light to pass through the patterned layer and the phase-shift layer and provide a first phase shift. The second aperture may allow light to pass through the patterned layer and the phase-shift layer and provide a second phase shift different than the first phase-shift. The light-absorbing layer may be disposed adjacent the first aperture and may include a light-absorbing material that reduces the intensity of light passing through the first aperture such that the intensity of light passing through the first aperture is substantially equal to the intensity of light passing through the second aperture.
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