Plasma producing method and apparatus as well as plasma processing apparatus

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United States of America Patent

APP PUB NO 20070144672A1
SERIAL NO

11586508

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Abstract

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Plasma producing method and apparatus as well as plasma processing apparatus including the plasma producing apparatus wherein one or more high-frequency antennas are arranged in a plasma producing chamber, and a high-frequency power is applied to a gas in the chamber from the antenna(s) to produce inductively coupled plasma. Impedance of the high-frequency antenna is set in a range of 45 .OMEGA. or lower.

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Patent Owner(s)

Patent OwnerAddress
NISSIN ELECTRIC CO LTD47 UMEZU TAKASE-CHO UKYO-KU KYOTO-SHI KYOTO 6158686 ?6158686
EMD CORPORATION2426-1 MIKAMI YASU-SHI SHIGA 520-2323

International Classification(s)

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  • 2006 Application Filing Year
  • C23C Class
  • 1166 Applications Filed
  • 600 Patents Issued To-Date
  • 51.46 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances2006200720082009201020112012201320142015201620172018201920200255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Deguchi, Hiroshige Kyoto-shi, JP 24 789
Ebe, Akinori Kyoto-shi, JP 31 119
Kato, Kenji Kyoto-shi, JP 319 2972
Kubota, Kiyoshi Kyoto-shi, JP 5 14
Setsuhara, Yuichi Osaka, JP 23 136
Yoneda, Hitoshi Kyoto-shi, JP 21 382

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  • 3 Citation Count
  • C23C Class
  • 3.52 % this patent is cited more than
  • 18 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges182381025732191810443701 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +020406080100120140160180200220240260

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