Cleaning method of apparatus for depositing AI-containing metal film and AI-containing metal nitride film
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Jun 28, 2007
app pub date -
Aug 22, 2006
filing date -
Dec 27, 2005
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A dry cleaning method for an apparatus for depositing a thin film that deposits an Al-containing metal film and an Al-containing metal nitride film is provided. The method includes maintaining a temperature inside of chamber of the apparatus for depositing a thin film at 430.degree. C. or higher and cleaning the inside of the chamber by supplying a cleaning gas including Cl.sub.2 into the chamber. When it is difficult to maintain the temperature inside the chamber at 430.degree. C. or higher, the method includes cleaning the inside of the chamber by using a cleaning gas including Cl.sub.2 plasma. Accordingly, the apparatus for depositing the thin film that deposits a titanium aluminum nitride (TiAlN) film and a similar type thin film can be effectively cleaned without having remaining products and particles.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully