Silicon wafer and method for production of silicon wafer
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United States of America Patent
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Issued Date -
Jun 21, 2007
app pub date -
Dec 18, 2002
filing date -
Dec 18, 2001
priority date (Note) -
Abandoned
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Abstract
A silicon wafer, which has been doped with nitrogen and has been subjected to an extrinsic gettering (EG) treatment, for example, the formation of a polysilicon layer. In the silicon wafer, when the wafer is exposed to an ion of a heavy metal such as copper or nickel in a device manufacturing process, the copper and nickel can be captured by the action of intrinsic gettering (IG) in the course of a heat treatment, and, when a polysilicon layer is formed as a strain layer, iron and copper can be captured by the action of an extrinsic gettering (EG) using the polysilicon as a strong point for the capture.
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