Semiconductor element and method of making same
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United States of America Patent
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Issued Date -
Jun 14, 2007
app pub date -
Dec 11, 2006
filing date -
Dec 14, 2005
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Abandoned
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Abstract
A method of making a semiconductor element which has a substrate formed of gallium oxide and a semiconductor layer formed on the substrate. The method has: a first dividing step that the substrate with the semiconductor layer formed thereon is divided into a strip bar along a first cleaved surface of the substrate; and a second dividing step that the strip bar is divided in a direction perpendicular to the first cleaved surface.
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