Controlling removal rate uniformity of an electropolishing process in integrated circuit fabrication
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United States of America Patent
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Issued Date -
Jun 14, 2007
app pub date -
Dec 17, 2004
filing date -
Dec 17, 2003
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Abandoned
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Abstract
An electropolishing process in integrated circuit fabrication on a wafer includes applying a stream of electrolyte to the wafer using a nozzle positioned adjacent to the wafer with a gap between the nozzle and the wafer. The removal rate uniformity of the electropolishing process is controlled by adjusting the gap between the nozzle and the wafer to adjust the removal rate profile of the stream of electrolyte applied by the nozzle.
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