Semiconductor element, production process thereof, semiconductor laser and production process thereof
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United States of America Patent
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Issued Date -
Jun 7, 2007
app pub date -
Jun 19, 2006
filing date -
Dec 6, 2005
priority date (Note) -
Abandoned
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Abstract
An object of the present invention is to provide a semiconductor production technology capable of preventing the peeling of the electrode which occurs in die bonding or wire bonding. There is provided a semiconductor element having an electrode in a surface or in a rear face of a semiconductor substrate, the semiconductor element having a structure in which an amorphous silicon layer 106 is inserted in between an electrode 107 and a semiconductor substrate 101, wherein hydrogen is not added to the amorphous silicon layer 106. Furthermore, an amorphous silicon layer 104 is inserted also in the interface between an electrode 105 and an insulating layer 103, and in the interface between the insulating layer and the semiconductor substrate. Moreover, the present invention is equally applicable to a semiconductor laser having an insulating layer, which serves as a reflective layer, in an oscillating surface side of light, and insulating layers, which serve as a multilayer reflective layer, in a non-oscillating surface side.
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