Nonvolatile memory devices having insulating spacer and manufacturing method thereof
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Jun 7, 2007
app pub date -
Dec 23, 2005
filing date -
Dec 1, 2005
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A nonvolatile memory device that effectively prevents the occurrence of the hump phenomenon as well as a manufacturing method for fabricating the same, is presented. In one embodiment, the nonvolatile memory device includes an insulating spacer formed at interface between the active region and isolation layer, and a charge trapping dielectric layer that is formed in the active region between the neighboring two insulating spacers. The device also includes a gate electrode layer formed on the charge trapping dielectric layer and a source and drain formed in the active region at both sides of the gate electrode layer.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully