Pattern formation method using nanoimprinting and device for carrying out same
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United States of America Patent
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Issued Date -
May 24, 2007
app pub date -
Dec 7, 2004
filing date -
Dec 11, 2003
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Abandoned
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Abstract
An object of the present invention is to provide a pattern forming method that solves the problems associated with thermal nanoimprinting lithography. The present invention discloses a method for forming a pattern in a resist film on a substrate by using a first mold provided with concave and convex portions, comprising the steps of: (1) pressing the first mold onto the resist film to transfer the concave and convex portions of the first mold to the resist film, while heating the first mold to a predetermined temperature or after having heated the first mold to a predetermined temperature; (2) separating the first mold from the resist film; and (3) etching the resist film to expose a surface of the substrate.
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