Importance

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Abstract

An inventive semiconductor device for emitting light when applying a voltage comprises: a first semiconductor region (3) whose conductivity is based on charge carriers of a first type of conductivity, e.g. electrons; a second semiconductor region (5) whose conductivity is based on charge carriers of a second type of conductivity, e.g. holes, which have a charge opposite that of the charge carriers of the first type of conductivity and; an active semiconductor region (7A 7C), which is situated between the first semiconductor region (3) and the second semiconductor region (5) and in which the emission of light occurs, these regions being embedded in the quantum structures (13, 15) of a semiconductor material having a direct band gap in at least two different intercoupled configurations. In addition, a switching device (20) for directly or indirectly influencing the current flowing through the active semiconductor region (7A 7C) is assigned to the inventive semiconductor device and is designed for switching back and forth at least between a current flowing through the active semiconductor region with a current intensity (H1) less than a specified threshold current intensity and a current flowing through the active semiconductor region with a current intensity (H2) greater than the threshold current intensity.

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First Claim