Stamp and fabricating method thereof, thin film transistor using the stamp, and liquid crystal display device having the thin film transistor
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United States of America Patent
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Mar 6, 2012
Grant Date -
May 17, 2007
app pub date -
May 31, 2006
filing date -
Nov 14, 2005
priority date (Note) -
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Abstract
Provided are a method of fabricating a stamp, a thin film transistor and a liquid crystal display device using the same. The stamp has an improved contact property with respect to a substrate. A charged zone is formed on the substrate using the stamp, and nano material charged with opposite charges to those of the charged zone is coated or plated to form a self-assembled monolayer (SAM). Therefore, the thin film transistor and the liquid crystal display device can have precise nano patterns, thereby improving the performance of the device.
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