HIGH RESISTANCE CMOS RESISTOR
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United States of America Patent
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app pub date -
Dec 6, 2006
filing date -
Apr 12, 2004
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Abstract
A high resistance CMOS resistor with a relatively small die size is provided. The CMOS resistor includes a p-field region disposed in a n-well of a substrate and a pair of p-type contact regions respectively disposed beside a field oxide layer in the n-well. The pair of p-type contact regions are respectively connected to two sides of the p-field region as a first ohmic contact and a second ohmic contact for the CMOS resistor. The CMOS resistor according to the present invention has a resistance of, for example, 10 k.OMEGA.-20 k.OMEGA. per square.
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