Selective reactive ion etching of wafers
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United States of America Patent
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app pub date -
Dec 19, 2006
filing date -
Dec 23, 2004
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Abandoned
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Abstract
The invention comprises a device for assisting in the selective reactive ion etching of wafers comprising, a graphite base plate including an opening for housing a wafer, and a plurality of graphite strips that can be arranged over the graphite base plate to select a site of a wafer housed in the base plate for etching.
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