Nitride based semiconductor device having multiple layer buffer structure and fabrication method thereof
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United States of America Patent
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Issued Date -
Apr 26, 2007
app pub date -
Oct 6, 2005
filing date -
Oct 6, 2005
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A multiple layered buffer structure for nitride based semiconductor device is provided herein. The buffer structure contains a first layer of Al.sub.xIn.sub.yGa.sub.1-x-yN grown under a high temperature, and a second layer of an un-doped or appropriately doped GaN based material grown under a low temperature The GaN based material of the second layer could be doped with Al, or In, or codoped with one of following sets of elements: Al/In, Si/In, Si/Al, Mg/In, Mg/Al, Si/Al/In, and Mg/Al/In. In another embodiment, the buffer structure contains a GaN seed layer, an AlInN thin layer, a GaN based main layer, and a GaN based thin layer. The GaN seed layer is grown under a high temperature while the other layers are grown under a low temperature.
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