LIGHT EMITTING DIODE
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United States of America Patent
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Issued Date -
Apr 26, 2007
app pub date -
Sep 28, 2006
filing date -
Oct 24, 2005
priority date (Note) -
Abandoned
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Abstract
A light emitting diode including a substrate, a semiconductor stacking layer, a first electrode and a second electrode is provided. The semiconductor stacking layer including an n-type doped semiconductor layer, a p-type doped semiconductor layer and an active layer is disposed on the substrate. The n-type doped semiconductor layer has In dopant. The active layer is disposed between the n-type doped semiconductor layer and the p-type doped semiconductor layer. In addition, the first electrode is disposed on the n-type doped semiconductor layer while the second electrode is disposed on the p-type doped semiconductor layer. In the light emitting diode mentioned above, no crack, open or pin hole are found in the n-type doped semiconductor layer, thus the light emitting diode mentioned above has lower power consumption, higher manufacturing yield and better reliability.
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