Blanket implant diode
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United States of America Patent
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Issued Date -
Apr 26, 2007
app pub date -
May 2, 2006
filing date -
Oct 20, 2005
priority date (Note) -
Abandoned
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Abstract
Blanket implant diode which can be used for transient voltage suppression having a P+ substrate implanted with an N-type dopant blanket implant near a top surface of the substrate, creating a P- region. An oxide mask is layered adjacent to and above the P- region. The oxide mask is partially etched away from a portion of the P- region, creating an etched region. An N-type main function implant is implanted into the etched region, creating an N+ region above the P+ substrate and adjacent the P-region. And, a metal is layered above the oxide mask in the etched region to form an electrode. Terminations may be attached electrically to both sides of the P-N junction. Methods of making and using the present invention and methods for transient voltage suppression are also provided.
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