Porous chalcogenide thin film, method for preparing the same and electronic device using the same

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United States of America Patent

APP PUB NO 20070090346A1
SERIAL NO

11439036

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Abstract

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A porous chalcogenide thin film having a microporous structure, a method for preparing the chalcogenide thin film and an electronic device employing the chalcogenide thin film, are provided. The porous chalcogenide thin film has superior crystallinity and can be applied as a semiconductor layer having superior electrical properties to the fabrication of devices by inserting functional metal or semiconductor nanoparticles into nanopores of the thin film.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG CORNING PRECISION GLASS CO LTD644-1 JINPYEONG-DONG GUMI 730-735

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hyun, Sang Heon Suwon-Si, KR 3 8
Jeong, Hyun Dam Suwon-Si, KR 33 346
Seon, Jong Baek Seoul, KR 31 191
Shin, Hyeon Jin Suwon-Si, KR 59 492

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