Sputtering target, low resistivity, transparent conductive film, method for producing such film and composition for use therein
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United States of America Patent
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Issued Date -
Mar 29, 2007
app pub date -
Sep 29, 2005
filing date -
Sep 29, 2005
priority date (Note) -
Abandoned
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Abstract
The present invention is directed to a composition consisting essentially of: a) from about 0.1 to about 60 mole % of MoO.sub.2, b) from 0 to about 99.9 mole % of In.sub.2O.sub.3, c) from 0 to about 99.9 mole % of SnO.sub.2, d) from 0 to about 99.9 mole % of ZnO, e) from 0 to about 99.9 mole % of Al.sub.2O.sub.3, f) from 0 to about 99.9 mole % of Ga.sub.2O.sub.3, wherein the sum of components b) through f) is from about 40 to about 99.9 mole %, and wherein the mole %s are based on the total product and wherein the sum of components a) through e) is 100. The invention is also directed to the sintered product of such composition, a sputtering target made from the sintered product and a transparent electroconductive film made from the composition.
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