Programmable magnetic memory device
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United States of America Patent
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N/A
Issued Date -
Mar 15, 2007
app pub date -
Sep 30, 2003
filing date -
Oct 3, 2002
priority date (Note) -
Abandoned
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Abstract
A memory device has an information plane (32) for storing data bits in a magnetic state of an electro-magnetic material at an array of bit locations (31). The device further has an array of electro-magnetic sensor elements (51) that are aligned with the bit locations. The information plane (32) is programmable or programmed via a separate writing device (21). The writing device provides at least one beam of radiation (26) for heating the electro-magnetic material at the bit locations to a programming temperature. The magnetic state of the bit locations is programmed by applying a magnetic field during said heating of selected bit locations via the beams of radiation. Hence the memory device provides a magnetic read-only memory (MROM) that cannot be (re-)programmed without the proper writing device.
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