Microwave plasma processing method, microwave plasma processing apparatus, and its plasma head
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United States of America Patent
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Issued Date -
Mar 8, 2007
app pub date -
Dec 24, 2004
filing date -
Dec 26, 2003
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Abandoned
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Abstract
A microwave plasma processing method and, in which a linear plasma is produced by means of a microwave, and an object to be processed is subjected to processing under atmospheric pressure or under a pressure near atmospheric pressure when the object is moved, while a surface of the object is maintained at a horizontal position with respect to the linear plasma. A plasma head has an H-plane slot antenna, and slots are arranged alternately on both sides of a centerline of a waveguide at a pitch of .lamda.g/2 (.lamda.g: wavelength of the microwave with the waveguide). A uniforming line having a distance of n.lamda.g/2 from the slots to an emission end of the plasma head is provided (n: an integral number).
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