Semiconductor lasers utilizing AlGaAsP
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United States of America Patent
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Issued Date -
Mar 8, 2007
app pub date -
Aug 24, 2005
filing date -
Aug 24, 2005
priority date (Note) -
Abandoned
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Abstract
A means of controlling the stress in a laser diode structure through the use of AlGaAsP is provided. Depending upon the amount of phosphorous in the material, it can be used to either match the lattice constant of GaAs, thus forming a strainless structure, or mismatch the lattice constant of GaAs, thereby adding tensile stress to the structure. Tensile stress can be used to mitigate the compressive stress due to material mismatches within the structure (e.g., a highly strained compressive quantum well), or due to the heat sink bonding procedure.
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