Wafer level hermetic bond using metal alloy
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United States of America Patent
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Issued Date -
Mar 1, 2007
app pub date -
Aug 26, 2005
filing date -
Aug 26, 2005
priority date (Note) -
Abandoned
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Abstract
Systems and methods for forming an encapsulated MEMS device include a hermetic seal which seals an insulating gas between two substrates, one of which supports the MEMS device. The hermetic seal may be formed by heating at least two metal layers, in order to melt at least one of the metal layers. The first melted metal material flows into and forms an alloy with a second metal material, forming a hermetic seal which encapsulates the MEMS device.
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