Gyro device implemented by back-end semiconductor manufacturing process

Number of patents in Portfolio can not be more than 2000

United States of America Patent

APP PUB NO 20070045755A1
SERIAL NO

11289905

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Abstract

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The invention relates to a single-chip gyro device, which includes a substrate, a plurality of metal layers and a plurality of dielectric layers, and a plurality of metal side walls. Each of the dielectric layers is located between two adjacent layers selected from a layer group consisting of the metal layers and the substrate. The metal side walls are located on edges of the plurality of dielectric layers so as to prevent the dielectric layers from being undercut and form a mechanical structure together with the metal layers and the dielectric layers to connect the circuit formed on the substrate.

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Patent Owner(s)

Patent OwnerAddress
ANALOG INTEGRATIONS CORPORATION1A1 NO 1 LI-HSIN RD I SCIENCE PARK HSIN-CHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fang, Weileun Hsinchu City, TW 32 245
Wen, Jung-Hung Jhubei City, TW 2 2

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