LIGHT REFLECTIVITY CONTROLLED PHOTODIODE CELL, AND METHOD OF MANUFACTURING THE SAME
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United States of America Patent
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Issued Date -
Mar 1, 2007
app pub date -
Aug 21, 2006
filing date -
Aug 23, 2005
priority date (Note) -
Abandoned
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Abstract
The photodiode cell (1) includes at least one photosensitive area (3), made in a silicon semiconductor substrate (2), for receiving light, particularly coherent light, and a passivation layer and a dielectric layer (4). The passivation layer is composed of at least a first silicon oxide layer (5) and a second nitride layer (6), made on the photosensitive area. The second nitride layer is made with a thickness within a determined margin, so as to be situated in a zone with the most constant possible light reflectivity independently of the thickness of the first layer. An etch (7) can be performed on one portion of the dielectric layer (4) or on the first layer (5) corresponding to half of the reception surface of the photosensitive area in order to obtain a reflectivity percentage mean of the light to be sensed by the photodiode cell.
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