Method of forming a crystalline structure and a method of manufacturing a semiconductor device
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United States of America Patent
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Issued Date -
Mar 1, 2007
app pub date -
Aug 25, 2006
filing date -
Aug 26, 2005
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Abandoned
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Abstract
In a method of forming a single crystalline structure and a method of manufacturing a semiconductor device by using the method of forming the single crystalline structure, a single crystalline seed having elements combining with oxygen to form a network former capable of being easily connected to a network of oxide glass is formed. The single crystalline seed is epitaxially grown to form a single crystalline structure.
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