Vaporizer for atomic layer deposition system
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United States of America Patent
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Issued Date -
Feb 22, 2007
app pub date -
Feb 10, 2006
filing date -
Feb 10, 2005
priority date (Note) -
Abandoned
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Abstract
A multi-stage precursor vessel system for an atomic layer deposition (ALD) system in which a precursor is transferred from a first, low temperature reservoir chamber into a second (or subsequent) chamber at higher temperature, which second (or subsequent) chamber is used to create a highest possible vapor pressure of the precursor allowed by its temperature without decomposition in the timeframe of its residence therein.
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