Process of forming an as-grown active p-type III-V nitride compound
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United States of America Patent
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Issued Date -
Feb 1, 2007
app pub date -
Aug 1, 2005
filing date -
Aug 1, 2005
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Abandoned
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Abstract
In a method of forming an as-grown active p-type III-V nitride compound layer, a substrate is introduced and heated in a reaction chamber. N.sub.2 carrier gas and reactive compounds including a source compound of a group III element, a nitrogen source compound, and a p-type impurity are fed in the reaction chamber. A chemical reaction occurs to form an as-grown active p-type III-V nitride compound layer.
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