Crystallization mask, crystallization method, and method of manufacturing thin film transistor including crystallized semiconductor

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United States of America Patent

PATENT NO 7691545
SERIAL NO

11523932

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Abstract

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A crystallization mask for laser illumination for converting amorphous silicon into polysilicon is provided, which includes: a plurality of transmissive areas having a plurality of first slits for adjusting energy of the laser illumination passing through the mask; and an opaque area.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG DISPLAY CO LTDGYEONGGI DO SOUTH KOREA GYEONGGI-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kang, Myung-Koo Seoul, KR 30 99
Kim, Hyun-Jae Seongnam-si, KR 68 396
Lee, Su-Gyeong Seoul, KR 10 51

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