Cr-capped chromeless phase lithography

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United States of America Patent

PATENT NO 7732102
APP PUB NO 20070015064A1
SERIAL NO

11181169

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Abstract

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A photolithographic mask is adapted for use in imparting a pattern to a substrate. The pattern comprises a plurality of features. At least one of the plurality of features (201) is implemented in the mask as a phase shifting structure (205) with a unitary layer of opaque material (207) disposed thereon. The mask is utilized to impart the pattern to a layer over a semiconductor substrate.

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Patent Owner(s)

Patent OwnerAddress
SHENZHEN XINGUODU TECHNOLOGY CO LTD17TH FLOOR JINSONG MANSION TERRA INDUSTRIAL & TRADE PARK FUTIAN SHENZHEN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cobb, Jonathan L Austin, US 4 38
Roman, Bernard J Austin, US 24 899
Wu, Wei E Austin, US 12 198

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